Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching

被引：11
|
作者：
Nakamura, Toshihiro [1 ]
Homma, Kohei [1 ]
Yakushiji, Takashi [1 ]
Tai, Ryusuke [1 ]
Nishio, Akira [1 ]
Tachibana, Kunihide [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 22-23期
关键词：
MOCVD; resistance switching; resistance random access memory; manganite;
D O I：
10.1016/j.surfcoat.2007.04.090
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Pr1-xCaxMnO3(PCMO) films with the desired atomic composition were deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using in situ infrared spectroscopic monitoring. The I-V characteristics exhibited nonlinear, asymmetric, and hysteretic behavior in PCMO-based devices with top electrode of Al or Ti. The electric-pulse-induced resistance switching was observed in the PCMO-based devices. The resistance change was dependent on the Pr/Ca composition ratio of the PCMO films and the kind of the top electrodes. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：9275 / 9278
页数：4
相关论文
共 50 条
  • [31] Synthesis of trialkylhydrazido metal complexes and the chemical vapor deposition of metal oxide films
    Hoffman, DM
    Lehn, JSM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 225 : U25 - U25
  • [32] Electric field assisted aerosol assisted chemical vapor deposition of nanostructured metal oxide thin films
    Warwick, Michael E. A.
    Binions, Russell
    SURFACE & COATINGS TECHNOLOGY, 2013, 230 : 28 - 32
  • [33] Electric-pulse-induced reversible resistance change effect and its fatigue behavior in manganite perovskite films
    Wang, Q
    Dong, R
    Chen, LD
    Chen, TL
    Li, XM
    PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 3799 - 3802
  • [34] CADMIUM TELLURIDE FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    CHU, TL
    CHU, SS
    FEREKIDES, C
    BRITT, J
    WU, CQ
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7651 - 7654
  • [35] Preparation of MgO films on GaAs by metalorganic chemical vapor deposition
    Boo, JH
    Yu, KS
    Koh, W
    Kim, Y
    MATERIALS LETTERS, 1996, 26 (4-5) : 233 - 236
  • [36] Properties of metalorganic precursors for chemical vapor deposition of oxide superconductors
    Zama, Hideaki
    Oda, Shunri
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1990, 29 (07): : 1072 - 1074
  • [37] Metalorganic chemical vapor deposition of titanium oxide for microelectronics applications
    Kanchana Vydianathan
    Guillermo Nuesca
    Gregory Peterson
    Eric T. Eisenbraun
    Alain E. Kaloyeros
    John J. Sullivan
    Bin Han
    Journal of Materials Research, 2001, 16 : 1838 - 1849
  • [38] Thin CdS films prepared by metalorganic chemical vapor deposition
    Uda, H
    Yonezawa, H
    Ohtsubo, Y
    Kosaka, M
    Sonomura, H
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (1-2) : 219 - 226
  • [39] Metalorganic chemical vapor deposition of PbTe films on GaAs substrates
    1600, (71):
  • [40] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ORIENTED ZNO FILMS
    KAUFMANN, T
    FUCHS, G
    WEBERT, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (05) : 635 - 639
12345