Hot Carrier injection effect on threshold voltage of NMOSFETs

被引：0

作者：

Lahbib, Insaf ^{[1
]}

Doukkali, Aziz ^{[1
]}

Martin, Patrick ^{[1
]}

Imbert, Guy ^{[2
]}

Raoulx, Denis ^{[2
]}

机构：

[1] Normandie Univ, ENSICAEN, CRISMAT, UMR 6508, 6 Blvd Marechal Juin, F-14050 Caen 04, France

[2] NXP Semicond, F-14460 Colombelles, France

来源：

2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) | 2015年

关键词：

reliability simulation; hot carrier degradation; threshold voltage shift; threshold voltage extraction; aging time;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs' Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. VTh extraction is conducted using Constant Current (CC) threshold voltage method.

引用

页码：164 / 167

页数：4

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