Hot Carrier injection effect on threshold voltage of NMOSFETs

被引：0

作者：

Lahbib, Insaf ^{[1
]}

Doukkali, Aziz ^{[1
]}

Martin, Patrick ^{[1
]}

Imbert, Guy ^{[2
]}

Raoulx, Denis ^{[2
]}

机构：

[1] Normandie Univ, ENSICAEN, CRISMAT, UMR 6508, 6 Blvd Marechal Juin, F-14050 Caen 04, France

[2] NXP Semicond, F-14460 Colombelles, France

来源：

2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) | 2015年

关键词：

reliability simulation; hot carrier degradation; threshold voltage shift; threshold voltage extraction; aging time;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs' Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. VTh extraction is conducted using Constant Current (CC) threshold voltage method.

引用

页码：164 / 167

页数：4

共 50 条

[21] Enhanced dynamic threshold voltage UTBB SOI nMOSFETs
Sasaki, K. R. A.
Manini, M. B.
Simoen, E.
Claeys, C.
Martino, J. A.
SOLID-STATE ELECTRONICS, 2015, 112 : 19 - 23
[22] New hot-carrier lifetime technique for high- to low-supplied voltage nMOSFETs
Guerin, C.
Parthasarathy, C.
Huard, V.
Bravaix, A.
IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2007, : 173 - +
[23] OXIDE CHARGE BUILDUP AND SPREAD-OUT DURING CHANNEL-HOT-CARRIER INJECTION IN NMOSFETS
CHEN, WL
MA, TP
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (06) : 319 - 321
[24] Hot-carrier defect length propagation in LDD NMOSFETs
Raychaudhuri, A
Kwan, WS
Deen, MJ
King, MIH
PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, 1997, 97 (10): : 242 - 258
[25] Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs
Salm, C.
Hof, A. J.
Kuper, F. G.
Schmitz, J.
MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1617 - 1622
[26] Hot carrier effects in nMOSFETs in 0.1μm CMOS technology
Li, E
Rosenbaum, E
Tao, J
Yeap, GCF
Lin, MR
Fang, P
1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, : 253 - 258
[27] HOT CARRIER INJECTION IN OXIDES AND THE EFFECT ON MOSFET RELIABILITY
BALK, P
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1984, (69): : 63 - 82
[28] Threshold voltage model for bulk strained-silicon NMOSFETs
Tinoco, J. C.
Garcia, R.
Niguez, B. I.
Cerdeira, A.
Estrada, M.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (03)
[29] Hot carrier degradation in novel strained-Si nMOSFETs
Lu, MF
Chiang, S
Liu, A
Huang-Lu, S
Yeh, MS
Hwang, JR
Tang, TH
Shiau, WT
Chen, MC
Wang, T
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 18 - 22
[30] MEASUREMENT AND ANALYSIS OF HOT-CARRIER-STRESS EFFECT ON NMOSFETS USING SUBSTRATE CURRENT CHARACTERIZATION
NISSANCOHEN, Y
FRANZ, GA
KWASNICK, RF
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 451 - 453

← 1 2 3 4 5 →