Optical characterization of InN layers grown by high-pressure chemical vapor deposition

被引：15
|
作者：
Alevli, M. [1 ]
Atalay, R. [1 ]
Durkaya, G. [1 ]
Weesekara, A. [1 ]
Perera, A. G. U. [1 ]
Dietz, N. [1 ]
Kirste, R. [2 ]
Hoffmann, A. [2 ]
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Tec Univ Berlin, Berlin, Germany
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2008年 / 26卷 / 04期
关键词：
D O I：
10.1116/1.2908736
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The optical properties of InN layers grown by high-pressure chemical vapor deposition have been studied. Raman, infrared reflection, and transmission spectroscopy studies have been carried out to investigate the structural and optical properties of InN films grown on sapphire and GaN/sapphire templates. Results obtained from Raman and IR reflectance measurements are used to estimate the free carrier concentrations, which were found to be varying from mid 10(18) to low 10(20) cm(-3). The values for free carrier concentrations are compared to optical absorption edge estimates obtained from optical transmission spectra analysis. The analysis shows that optical absorption edge for InN shifts below 1.1 eV as the free carrier concentration decreases to low 10(18) cm(-3). (C) 2008 American Vacuum Society.
引用
收藏
页码：1023 / 1026
页数：4
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