Optical characterization of InN layers grown by high-pressure chemical vapor deposition

被引：15

作者：

Alevli, M. ^{[1
]}

Atalay, R. ^{[1
]}

Durkaya, G. ^{[1
]}

Weesekara, A. ^{[1
]}

Perera, A. G. U. ^{[1
]}

Dietz, N. ^{[1
]}

Kirste, R. ^{[2
]}

Hoffmann, A. ^{[2
]}

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] Tec Univ Berlin, Berlin, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2008年 / 26卷 / 04期

关键词：

D O I：

10.1116/1.2908736

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optical properties of InN layers grown by high-pressure chemical vapor deposition have been studied. Raman, infrared reflection, and transmission spectroscopy studies have been carried out to investigate the structural and optical properties of InN films grown on sapphire and GaN/sapphire templates. Results obtained from Raman and IR reflectance measurements are used to estimate the free carrier concentrations, which were found to be varying from mid 10(18) to low 10(20) cm(-3). The values for free carrier concentrations are compared to optical absorption edge estimates obtained from optical transmission spectra analysis. The analysis shows that optical absorption edge for InN shifts below 1.1 eV as the free carrier concentration decreases to low 10(18) cm(-3). (C) 2008 American Vacuum Society.

引用

页码：1023 / 1026

页数：4

共 50 条

[31] INTERFACE CHARACTERIZATION OF (IN,GA)AS/ALGAAS LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KIM, J
ALWAN, JJ
COLEMAN, JJ
WAYMAN, CM
MATERIALS LETTERS, 1991, 11 (5-7) : 151 - 154
[32] Investigation, characterization and effect of substrate position on thick AlN layers grown by high temperature chemical vapor deposition
Zhang, Dian
Liu, Fa-Min
Cai, Lu-Gang
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (02) : 1239 - 1245
[33] Investigation, characterization and effect of substrate position on thick AlN layers grown by high temperature chemical vapor deposition
Dian Zhang
Fa-Min Liu
Lu-Gang Cai
Journal of Materials Science: Materials in Electronics, 2015, 26 : 1239 - 1245
[34] Characterization of TiN film grown by low-pressure-chemical-vapor-deposition
Mei, YJ
Chang, TC
Hu, JC
Chen, LJ
Yang, YL
Pan, FM
Wu, WF
Ting, A
Chang, CY
THIN SOLID FILMS, 1997, 308 : 594 - 598
[35] On the dynamics in chemical vapor deposition of InN
Hsu, Chih-Wei
Deminskyi, Petro
Persson, Anton
Karlsson, Matts
Pedersen, Henrik
JOURNAL OF APPLIED PHYSICS, 2021, 130 (13)
[36] HETEROEPITAXY AND CHARACTERIZATION OF CUGASE2 LAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
CHICHIBU, S
HARADA, Y
UCHIDA, M
WAKIYAMA, T
MATSUMOTO, S
SHIRAKATA, S
ISOMURA, S
HIGUCHI, H
JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) : 3009 - 3015
[37] Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition
Yang, K
Zhang, R
Shen, B
Qin, LH
Chen, ZZ
Zheng, YD
Huang, ZC
Chen, JC
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 923 - 926
[38] Structural characterization of high-quality ZnS epitaxial layers grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition
Nakamura, S
Takagimoto, S
Ando, T
Yamada, Y
Taguchi, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (12): : 6993 - 6997
[39] Structural characterization of high-quality ZnS epitaxial layers grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition
Nakamura, Seiji
Takagimoto, Shinsuke
Ando, Tsuyoshi
Yamada, Yoichi
Taguchi, Tsunemasa
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (12): : 6993 - 6997
[40] Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition
Wang, H.
Huang, Y.
Sun, Q.
Chen, J.
Zhu, J. J.
Wang, L. L.
Wang, Y. T.
Yang, H.
Wu, M. F.
Qu, Y. H.
Jiang, D. S.
MATERIALS LETTERS, 2007, 61 (02) : 516 - 519

← 1 2 3 4 5 →