A novel miniaturization of inductively coupled plasma (ICP) source based on printed circuit produced using micro-fabrication techniques is presented. The basic parameters of the novel ICP, including its radio frequency, power loss, size, and argon consumption are less than 1% of that for the case of atmospheric pressure ICP source. For example, at 100Pa of argon gas pressure, the present ICP source can be ignited by using the rf power less than 3.5 W. Potential applications of the ICP is discussed.
机构:
CSIR, Natl Inst for Materials, Research, Pretoria, S Afr, CSIR, Natl Inst for Materials Research, Pretoria, S AfrCSIR, Natl Inst for Materials, Research, Pretoria, S Afr, CSIR, Natl Inst for Materials Research, Pretoria, S Afr
Olsen, S.D.
Boehmer, R.G.
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机构:
CSIR, Natl Inst for Materials, Research, Pretoria, S Afr, CSIR, Natl Inst for Materials Research, Pretoria, S AfrCSIR, Natl Inst for Materials, Research, Pretoria, S Afr, CSIR, Natl Inst for Materials Research, Pretoria, S Afr