Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT

被引：6

作者：

Kaminska, E ^{[1
]}

Piotrowska, A ^{[1
]}

Szczesny, A ^{[1
]}

Kuchuk, A ^{[1
]}

Lukasiewicz, R ^{[1
]}

Golaszewska, K ^{[1
]}

Kruszka, R ^{[1
]}

Barcz, A ^{[1
]}

Jakiela, R ^{[1
]}

Dynowska, E ^{[1
]}

Stonert, A ^{[1
]}

Turos, A ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssc.200460620

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have developed the deposition and studied the electrical characteristics, microstructure and thermal reliability of Ru-based contacts on n-type GaN as well as on AlGaN/GaN HEMT heterostructure. Ru, RuO2 and Ru-Si-O layers were deposited by reactive magnetron sputtering and annealed up to 900 degrees C. Amorphous, conducting RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900 degrees C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.

引用

页码：1060 / 1064

页数：5

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