Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature

被引：6
|
作者：
Sekiguchi, Shohei [1 ]
Ahn, Min-Ju [1 ]
Saraya, Takuya [1 ]
Kobayashi, Masaharu [1 ]
Hiramoto, Toshiro [1 ]
机构：
[1] Univ Tokyo, Tokyo, Japan
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
关键词：
body factor; low temperature; SS; CMOS; TRANSISTORS;
D O I：
10.1109/EDTM50988.2021.9420934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 6.5K. SS is 60.3mV/dec at RT and decreases in proportional to temperature (T), but SS tends to saturate below 36K, similar to transistors with non-zero body factor. The reasons for the phenomena are discussed.
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页数：3
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