Fabrication and characterization of reactively sputtered TaN thin-film resistors for millimeter wave applications

被引：11

作者：

Mellberg, A ^{[1
]}

Nicols, SP ^{[1
]}

Rorsman, N ^{[1
]}

Zirath, H ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 11期

关键词：

D O I：

10.1149/1.1804985

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A tantalum nitride (TaN) thin-film resistor (TFR) lift-off process was developed by reactively sputtering TaN from a pure Ta metal target. The films were deposited at a rate of approximately 3 angstrom/s using a N-2/Ar ratio of 0.22 at 5 mTorr and 100 W of dc power. TFRs were fabricated on silicon and semi-insulating InP with reproducible resistances of 80-85 Omega/square at thicknesses of 550-700 angstrom using a lift-off technique. Resistors fabricated on semi-insulating InP utilizing microstrip technology were characterized by S-parameter measurements up to 67 GHz. A model, based on a lossy transmission line, described the TFRs with good accuracy. (C) 2004 The Electrochemical Society.

引用

页码：G261 / G263

页数：3

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