Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes

被引：1
|
作者：
Duboz, Jean-Yves [1 ]
Arcara, Victor Fan [1 ]
Kessaci, Cynthia [1 ]
Vezian, Stephane [1 ]
Damilano, Benjamin [1 ]
机构：
[1] Univ Cote dAzur, CRHEA, CNRS, F-06560 Valbonne, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 07期
关键词：
nitrides; symmetry of bands; tunnel junction; UV LED; TEMPERATURE-DEPENDENCE; HOLE SCATTERING; GAN; CRYSTALS; BLUE; TOP;
D O I：
10.1002/pssa.202200055
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The polarization of the light emitted by an ultraviolet light-emitting diode (LED) has a direct impact on the device performance: a transverse electric polarization of the emission is preferred for extraction from the surface of the diode grown along the c axis. While this is the case for most UV LEDs grown on AlN, this state of events could be called into question when a tunnel junction (TJ) is added to make up for the poor p doping in Al-rich (Al,Ga)N and improve the hole injection. Indeed, nitride-based TJs mainly inject holes with a Gamma(7) symmetry, which could lead to transverse magnetic polarization of the light emitted by the diode. We have experimentally investigated this important issue and delivered a clear answer to this question.
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页数：5
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