Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes

被引：1

作者：

Duboz, Jean-Yves ^{[1
]}

Arcara, Victor Fan ^{[1
]}

Kessaci, Cynthia ^{[1
]}

Vezian, Stephane ^{[1
]}

Damilano, Benjamin ^{[1
]}

机构：

[1] Univ Cote dAzur, CRHEA, CNRS, F-06560 Valbonne, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 07期

关键词：

nitrides; symmetry of bands; tunnel junction; UV LED; TEMPERATURE-DEPENDENCE; HOLE SCATTERING; GAN; CRYSTALS; BLUE; TOP;

D O I：

10.1002/pssa.202200055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The polarization of the light emitted by an ultraviolet light-emitting diode (LED) has a direct impact on the device performance: a transverse electric polarization of the emission is preferred for extraction from the surface of the diode grown along the c axis. While this is the case for most UV LEDs grown on AlN, this state of events could be called into question when a tunnel junction (TJ) is added to make up for the poor p doping in Al-rich (Al,Ga)N and improve the hole injection. Indeed, nitride-based TJs mainly inject holes with a Gamma(7) symmetry, which could lead to transverse magnetic polarization of the light emitted by the diode. We have experimentally investigated this important issue and delivered a clear answer to this question.

引用

页数：5

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