Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes

被引：1

作者：

Duboz, Jean-Yves ^{[1
]}

Arcara, Victor Fan ^{[1
]}

Kessaci, Cynthia ^{[1
]}

Vezian, Stephane ^{[1
]}

Damilano, Benjamin ^{[1
]}

机构：

[1] Univ Cote dAzur, CRHEA, CNRS, F-06560 Valbonne, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 07期

关键词：

nitrides; symmetry of bands; tunnel junction; UV LED; TEMPERATURE-DEPENDENCE; HOLE SCATTERING; GAN; CRYSTALS; BLUE; TOP;

D O I：

10.1002/pssa.202200055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The polarization of the light emitted by an ultraviolet light-emitting diode (LED) has a direct impact on the device performance: a transverse electric polarization of the emission is preferred for extraction from the surface of the diode grown along the c axis. While this is the case for most UV LEDs grown on AlN, this state of events could be called into question when a tunnel junction (TJ) is added to make up for the poor p doping in Al-rich (Al,Ga)N and improve the hole injection. Indeed, nitride-based TJs mainly inject holes with a Gamma(7) symmetry, which could lead to transverse magnetic polarization of the light emitted by the diode. We have experimentally investigated this important issue and delivered a clear answer to this question.

引用

页数：5

共 50 条

[1] InGaN/GaN light-emitting diode with a polarization tunnel junction
Zhang, Zi-Hui
Tan, Swee Tiam
Kyaw, Zabu
Ji, Yun
Liu, Wei
Ju, Zhengang
Hasanov, Namig
Sun, Xiao Wei
Demir, Hilmi Volkan
APPLIED PHYSICS LETTERS, 2013, 102 (19)
[2] Fabrication and Characterization of Multiquantum Shell Light-Emitting Diodes with Tunnel Junction
Murakami, Hideki
Suzuki, Atsushi
Nokimura, Kyohei
Takebayashi, Minoru
Goto, Nanami
Terazawa, Mizuki
Lu, Weifang
Sone, Naoki
Iida, Kazuyoshi
Ohya, Masaki
Kamiyama, Satoshi
Takeuchi, Tetsuya
Iwaya, Motoaki
Akasaki, Isamu
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (07):
[3] Cascaded GaN Light-Emitting Diodes With Hybrid Tunnel Junction Layers
Chang, Shoou-Jinn
Lin, Wei-Heng
Chen, Wei-Shou
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2015, 51 (08)
[4] Junction temperature measurements in deep-UV Light-Emitting Diodes
Xi, Y
Xi, JQ
Gessmann, T
Shah, JM
Kim, JK
Schubert, EF
Fischer, AJ
Crawford, MH
Bogart, KHA
Allerman, AA
GaN, AIN, InN and Their Alloys, 2005, 831 : 37 - 42
[5] Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes
Bharadwaj, Shyam
Miller, Jeffrey
Lee, Kevin
Lederman, Joshua
Siekacz, Marcin
Xing, Huili
Jena, Debdeep
Skierbiszewski, Czeslaw
Turski, Henryk
OPTICS EXPRESS, 2020, 28 (04) : 4489 - 4500
[6] Theoretical Investigation of Efficient Green Tunnel-Junction Light-Emitting Diodes
Kuo, Yen-Kuang
Shih, Ya-Hsuan
Chang, Jih-Yuan
Chen, Fang-Ming
Lee, Ming-Lun
Sheu, Jinn-Kong
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 75 - 78
[7] Hybrid tunnel junction contacts to III-nitride light-emitting diodes
Young, Erin C.
Yonkee, Benjamin P.
Wu, Feng
Oh, Sang Ho
DenBaars, Steven P.
Nakamura, Shuji
Speck, James S.
APPLIED PHYSICS EXPRESS, 2016, 9 (02)
[8] Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes
Sadaf, S. M.
Ra, Y. H.
Szkopek, T.
Mi, Z.
NANO LETTERS, 2016, 16 (02) : 1076 - 1080
[9] Junction temperature in ultraviolet light-emitting diodes
Xi, YG
Gessmann, T
Xi, JQ
Kim, JK
Shah, JM
Schubert, EF
Fischer, AJ
Crawford, MH
Bogart, KHA
Allerman, AA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7260 - 7266
[10] Recent Progress in III-Nitride Tunnel Junction Light-Emitting Diodes
Zhou, Qianxi
Song, Jiahao
Sun, Ke
Sun, Yuechang
Liu, Sheng
Zhou, Shengjun
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (05):

← 1 2 3 4 5 →