Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

被引：22
|
作者：
Deuermeier, Jonas [1 ,2 ]
Kiazadeh, Asal [1 ,2 ]
Klein, Andreas [3 ]
Martins, Rodrigo [1 ,2 ]
Fortunato, Elvira [1 ,2 ]
机构：
[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, i3N CENIMAT, Campus Caparica, P-2829516 Caparica, Portugal
[2] CEMOP UNINOVA, Campus Caparica, P-2829516 Caparica, Portugal
[3] Tech Univ Darmstadt, Dept Mat & Earth Sci, Otto Berndt Str 3, D-64287 Darmstadt, Germany
来源：
NANOMATERIALS | 2019年 / 9卷 / 02期
基金：
欧盟地平线“2020”;
关键词：
resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide; ELECTRICAL-CONDUCTIVITY;
D O I：
10.3390/nano9020289
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.
引用
收藏
页数：10
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