Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

被引：22
|
作者：
Deuermeier, Jonas [1 ,2 ]
Kiazadeh, Asal [1 ,2 ]
Klein, Andreas [3 ]
Martins, Rodrigo [1 ,2 ]
Fortunato, Elvira [1 ,2 ]
机构：
[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, i3N CENIMAT, Campus Caparica, P-2829516 Caparica, Portugal
[2] CEMOP UNINOVA, Campus Caparica, P-2829516 Caparica, Portugal
[3] Tech Univ Darmstadt, Dept Mat & Earth Sci, Otto Berndt Str 3, D-64287 Darmstadt, Germany
来源：
NANOMATERIALS | 2019年 / 9卷 / 02期
基金：
欧盟地平线“2020”;
关键词：
resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide; ELECTRICAL-CONDUCTIVITY;
D O I：
10.3390/nano9020289
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.
引用
收藏
页数：10
相关论文
共 50 条
  • [1] Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching
    Vishwanath, Sujaya Kumar
    Woo, Hyunsuk
    Jeon, Sanghun
    NANOTECHNOLOGY, 2018, 29 (23)
  • [2] Multi-level resistive switching in HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode
    Mahata, Chandreswar
    Kim, Sungjun
    2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2020,
  • [3] Adsorption of water on Cu2O and Al2O3 thin
    Deng, Xingyi
    Herranz, Tirma
    Weis, Christoph
    Bluhm, Hendrik
    Salmeron, Miquel
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (26): : 9668 - 9672
  • [4] Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure
    Liu, Jian
    Yang, Huafeng
    Ma, Zhongyuan
    Chen, Kunji
    Zhang, Xinxin
    Huang, Xinfan
    Oda, Shunri
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (02)
  • [5] Influence of the Cu2O morphology on the metallization of Al2O3 ceramics
    Zheng, Jing-Wu
    Gao, Deng-Ming
    Qiao, Lang
    Ying, Yao
    Li, Wang-Chang
    Jiang, Li-Qiang
    Che, Sheng-Lei
    SURFACE & COATINGS TECHNOLOGY, 2016, 285 : 249 - 254
  • [6] Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching
    Hubbard, William A.
    Kerelsky, Alexander
    Jasmin, Grant
    White, E. R.
    Lodico, Jared
    Mecklenburg, Matthew
    Regan, B. C.
    NANO LETTERS, 2015, 15 (08) : 5665 - 5665
  • [7] Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching
    Hubbard, William A.
    Kerelsky, Alexander
    Jasmin, Grant
    White, E. R.
    Lodico, Jared
    Mecklenburg, Matthew
    Regan, B. C.
    NANO LETTERS, 2015, 15 (06) : 3983 - 3987
  • [8] Resistive switching effect on Al2O3/InGaAs stacks
    Palumbo, F.
    Shekhter, P.
    Krylov, I.
    Ritter, D.
    Eizenberg, M.
    MICROELECTRONIC ENGINEERING, 2013, 109 : 83 - 86
  • [9] Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material
    Banerjee, Writam
    Xu, Xiaoxin
    Lv, Hangbing
    Liu, Qi
    Long, Shibing
    Liu, Ming
    ACS OMEGA, 2017, 2 (10): : 6888 - 6895
  • [10] Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
    Kumar, Dayanand
    Aluguri, Rakesh
    Chand, Umesh
    Tseng, Tseung-Yuen
    APPLIED PHYSICS LETTERS, 2017, 110 (20)
12345