Etching characteristics and absence of electrical properties damage of PZT thin films etched before crystallization

被引：7
|
作者：
Liang, R. H. [1 ]
Remiens, D. [1 ]
Soyer, C. [1 ]
Sama, N. [1 ]
Dong, X. L. [2 ]
Wang, G. S. [2 ]
机构：
[1] Mat & Integrat Microelect & Microsyst Team, DOAE, UMR 8520, IEMN, F-59655 Villeneuve Dascq, France
[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 04期
关键词：
etching; PZT; dielectric properties; ferroelectric properties; piezoelectric effect;
D O I：
10.1016/j.mee.2007.12.031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ion beam etching (IBE) process was performed on the amorphous PZT film which is deposited on the LNO coated SiO2/Si substrate, followed by the annealing step at the crystallization temperature. No damaged layer can be observed on the PZT film surface after etching. Compared to the un-etched PZT film, there is no or very little degradation on the dielectric, ferroelectric and piezoelectric properties. The mechanism will be discussed in this paper. These results are very beneficial to the development of the ferroelectric film applications in the DRAM, FERAM and MEMS field. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：670 / 674
页数：5
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