Crystallization kinetics and dielectric properties of solution deposited, La doped PZT thin films

La3+ doped PZT thin films of a Pb1.025La0.05(Zr-0.48, Ti-0.52)O-3 nominal stoichiometry have been processed via chemical solution deposition on (111)-Pt/TiO2/SiO2/Si-(100). The crystallization textures and crystallization kinetics have been investigated in the temperature range from 550 to 700 degreesC, starting from a common annealed condition at 500 degreesC. The dielectric and ferroelectric properties are also reported. It is shown that crystallization proceeds from the nanocrystalline pyrochlore phase with the formation of perovskite crystallites with (100) preferred orientation. The first crystallites to form were found to be enriched in Pb and depleted in Zr. The crystallization kinetics follow a parabolic law of the Avrami-type with time exponents in the range from 1.5 to 1.9. The ferroelectric and dielectric properties are shown to depend on the annealing conditions and microstructure. The results are discussed in comparison to those of non-doped PZT thin films. (C) 2002 Elsevier Science B.V. All rights reserved.