Total ionizing dose effects on Ag/ amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memory

被引：1
|
作者：
Song, H. J. [1 ,2 ]
Yan, W. Z. [1 ,2 ]
Zhong, X. L. [1 ,2 ]
Zheng, S. Z. [1 ,2 ]
Yang, Shengsheng [3 ]
Xue, Yuxiong [3 ]
Wang, Guangyi [3 ]
Guo, H. X. [1 ,2 ]
Wang, J. B. [1 ,2 ]
机构：
[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Natl Prov Lab Special Funct Thin Film Mat, Xiangtan 411105, Hunan, Peoples R China
[3] Lanzhou Inst Phys, Natl Key Lab Sci & Technol Vacuum Technol & Phys, Lanzhou 730000, Gansu, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2018年 / 219卷
基金：
中国国家自然科学基金;
关键词：
Total ionizing dose effects; Resistive switching memory; Ag electrode; Amorphous Bi3.15Nd0.85Ti3O12 thin film; RADIATION; MECHANISMS; FILAMENTS; HARDNESS; FILM;
D O I：
10.1016/j.matchemphys.2018.08.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Here, the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were designed and prepared, and the total ionizing dose (TID) effects of Co-60 gamma-ray on the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were investigated. The results show that the resistance in low resistance state (LRS), resistance in high resistance state (HRS), and set voltage are almost immune to a TID up to 1 Mrad(Si), whereas the reset voltage and forming voltage are impacted slightly. The good radiation immunity is related to the metallic conductive filaments and the amorphous Bi3.15Nd0.85Ti3O12/Pt matrix. These results suggest that the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt devices show potential for radiation-hard electronics applications.
引用
收藏
页码：340 / 346
页数：7
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