Synchrotron X-Ray Topography Observation and Classification of Dislocations in β-Ga2O3 single crystal substrates grown by EFG

被引:0
|
作者
Yau, Yongzhao [1 ]
Sugawara, Yoshihiro [1 ]
Ishikawa, Yukari [1 ]
Takahashi, Yumiko [2 ]
Hirano, Keiichi [3 ]
机构
[1] Japan Fine Ceram Ctr, Nagoya, Aichi, Japan
[2] Nihon Univ, Tokyo, Japan
[3] High Energy Accelerator Res Org, Tsukuba, Ibaraki, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页数:1
相关论文
共 50 条
  • [31] Characterization of grown-in dislocations in benzophenone single crystals by x-ray topography
    Tachibana, Masaru
    Motomura, Shigeki
    Uedono, Akira
    Tang, Qi
    Kojima, Kenichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (07): : 2202 - 2205
  • [32] Atomic scale observation of threading dislocations in α-Ga2O3
    Mullen, Ross
    Roberts, Joseph W.
    Chalker, Paul R.
    Oliver, Rachel A.
    Hourahine, Ben
    Massabuau, Fabien C. P.
    AIP ADVANCES, 2024, 14 (11)
  • [33] Investigation of the crack extending downward along the seed of the β-Ga2O3 crystal grown by the EFG method
    Li, Pengkun
    Bu, Yuzhe
    Chen, Duanyang
    Sai, Qinglin
    Qi, Hongji
    CRYSTENGCOMM, 2021, 23 (36) : 6300 - 6306
  • [34] Growth of (100) β-Ga2O3 single crystal by controlling the capillary behaviors in EFG system
    Shin, Yun-Ji
    Lim, Su-Min
    Jeong, Woon-Hyeon
    Cho, Seong-Ho
    Choi, Mee-Hi
    Lee, Won-Jae
    Jeong, Seong-Min
    Bae, Si-Young
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SF)
  • [35] X-ray Detectors Based on Ga2O3 Microwires
    Zhang, Chongyang
    Dou, Wenjie
    Yang, Xun
    Zang, Huaping
    Chen, Yancheng
    Fan, Wei
    Wang, Shaoyi
    Zhou, Weimin
    Chen, Xuexia
    Shan, Chongxin
    MATERIALS, 2023, 16 (13)
  • [36] Direct observation of stress-induced dislocations in protein crystals by synchrotron X-ray topography
    Suzuki, Ryo
    Tachibana, Masaru
    Koizumi, Haruhiko
    Kojima, Kenichi
    ACTA MATERIALIA, 2018, 156 : 479 - 485
  • [37] X-Ray Luminescence of β-Ga2O3 Thin Films
    O. M. Bordun
    B. O. Bordun
    I. Yo. Kukharskyy
    I. I. Medvid
    Journal of Applied Spectroscopy, 2020, 86 : 1010 - 1013
  • [38] X-Ray Luminescence of β-Ga2O3 Thin Films
    Bordun, O. M.
    Bordun, B. O.
    Kukharskyy, I. Yo.
    Medvid, I. I.
    JOURNAL OF APPLIED SPECTROSCOPY, 2020, 86 (06) : 1010 - 1013
  • [39] Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β-Ga2O3 (010) Substrates
    Sasaki, Kohei
    Higashiwaki, Masataka
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) : 493 - 495
  • [40] Scintillation Properties of β-Ga2O3 Single Crystal Excited by α-Ray
    He, Nuotian
    Xu, Mengxuan
    Tang, Huili
    Liu, Bo
    Zhu, Zhichao
    Gu, Mu
    Xu, Jun
    Liu, Jinliang
    Chen, Liang
    Ouyang, Xiaoping
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (01) : 400 - 404