48GHz static frequency dividers in transferred-substrate HBT technology

被引：0
|
作者：
Pullela, R [1 ]
Mensa, D [1 ]
Lee, Q [1 ]
Agarwal, B [1 ]
Guthrie, J [1 ]
Jagannathan, S [1 ]
Rodwell, MJW [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 16期
关键词：
D O I：
10.1049/el:19981103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In addition to an ultrahigh heterojunction bipolar transistor bandwidth, the transferred-substrate process offers the significant advantages of a low parasitic microstrip wiring environment and a low thermal impedance environment. The first digital integrated circuits using this technology, D-flipflops connected as 2:1 static frequency dividers, are reported.
引用
收藏
页码：1580 / 1581
页数：2
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