48GHz static frequency dividers in transferred-substrate HBT technology

被引：0

作者：

Pullela, R ^{[1
]}

Mensa, D ^{[1
]}

Lee, Q ^{[1
]}

Agarwal, B ^{[1
]}

Guthrie, J ^{[1
]}

Jagannathan, S ^{[1
]}

Rodwell, MJW ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 16期

关键词：

D O I：

10.1049/el:19981103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In addition to an ultrahigh heterojunction bipolar transistor bandwidth, the transferred-substrate process offers the significant advantages of a low parasitic microstrip wiring environment and a low thermal impedance environment. The first digital integrated circuits using this technology, D-flipflops connected as 2:1 static frequency dividers, are reported.

引用

页码：1580 / 1581

页数：2

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