Design and characterisation of an active mirror for EUV-lithography

被引:8
|
作者
Saathof, Rudolf [1 ,2 ]
Schutten, Gerrit Jan M. [1 ]
Spronck, Jo W. [1 ]
Schmidt, Robert H. Munnig [1 ]
机构
[1] Delft Univ Technol, Precis & Microsyst Engn, Mechatron Syst Design, NL-2628 CD Delft, Netherlands
[2] Vienna Univ Technol, Automat & Control Inst, A-1040 Vienna, Austria
关键词
Adaptive optics; Deformable mirror; Active mirror; EUV lithography; DEFORMABLE MIRROR; OPTICAL-SYSTEMS; OPEN-LOOP; LOW-COST; PERFORMANCE; COMPENSATION; MODES;
D O I
10.1016/j.precisioneng.2015.03.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Due to the absorption of extreme ultraviolet (EUV) light in the projection optical system of an EUV lithography machine, its mirrors thermally deform resulting in wavefront errors (WFEs) that deteriorate the imaging process. In order to compensate and correct for these mirror deformations, this paper proposes an adaptive optics (AO) system that uses an active mirror (AM) to counteract these WFEs. For this purpose, a list of system and mirror requirements is composed as well as a list of design choices, which motivate the AM design. In order to asses the specifications of this AM, finite element method (FEM) and experimental analyses are carried out to obtain and validate the general properties of the AM. For assessing linearity, the formal definition of linearity is used and verified in the experimental set-up. The instrument transfer function (ITF) is obtained by actuating the AM with different spatial frequencies f(x) and measuring the deformation amplitude. The AM is proven to be linear given a linear coefficient of thermal expansion (CTE) and the ITE shows a f(x)(-2) trend for both the time constant and the amplitude of the deformation. By using the ITF it is shown that the characteristics of the AM is suitable for an AO system for EUV lithography. (C) 2015 Elsevier Inc. All rights reserved.
引用
收藏
页码:102 / 110
页数:9
相关论文
共 50 条
  • [31] Resist materials design to improve sensitivity in EUV lithography
    Tsubaki, Hideaki
    Tsuchihashi, Tooru
    Yamashita, Katsuhiro
    Tsuchimura, Tomotaka
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
  • [32] Effect of leaving group design on EUV lithography performance
    Ongayi, Owendi
    Jain, Vipul
    Coley, Suzanne
    Valeri, David
    Amy, Kwok
    Quach, Dung
    Wagner, Mike
    Cameron, Jim
    Thackeray, Jim
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IV, 2013, 8679
  • [33] Design approach and comparison of projection cameras for EUV lithography
    Lerner, SA
    Sasian, JM
    Descour, MR
    OPTICAL ENGINEERING, 2000, 39 (03) : 792 - 802
  • [34] Design and analysis of a compact EUV interferometric lithography system
    Smith, Bruce W.
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2009, 8 (02):
  • [35] OPTICAL LITHOGRAPHY Lithography at EUV wavelengths
    Tallents, Greg
    Wagenaars, Erik
    Pert, Geoff
    NATURE PHOTONICS, 2010, 4 (12) : 809 - 811
  • [36] EUV LITHOGRAPHY Lithography gets extreme
    Wagner, Christian
    Harned, Noreen
    NATURE PHOTONICS, 2010, 4 (01) : 24 - 26
  • [37] Advanced Multilayer Mirror Design to Mitigate EUV Shadowing
    Sherwin, Stuart
    Waller, Laura
    Neureuther, Andrew
    Naulleau, Patrick
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY X, 2019, 10957
  • [38] EUV sources for lithography
    Richardson, Martin
    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 482 - 483
  • [39] Effect of charged-particle bombardment on collector mirror reflectivity in EUV lithography devices
    Allain, J. P.
    Nieto, M.
    Hassanein, A.
    Titov, V.
    Plotkin, P.
    Hendricks, M.
    Hinson, E.
    Chrobak, C.
    van der Velden, M. H. L.
    Rice, B.
    EMERGING LITHOGRAPHIC TECHNOLOGIES X, PTS 1 AND 2, 2006, 6151 : U1349 - U1358
  • [40] Photomasks for EUV Lithography
    Progler, Christopher
    Abboud, Frank
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2013, 12 (02):