Design and characterisation of an active mirror for EUV-lithography

被引:8
|
作者
Saathof, Rudolf [1 ,2 ]
Schutten, Gerrit Jan M. [1 ]
Spronck, Jo W. [1 ]
Schmidt, Robert H. Munnig [1 ]
机构
[1] Delft Univ Technol, Precis & Microsyst Engn, Mechatron Syst Design, NL-2628 CD Delft, Netherlands
[2] Vienna Univ Technol, Automat & Control Inst, A-1040 Vienna, Austria
关键词
Adaptive optics; Deformable mirror; Active mirror; EUV lithography; DEFORMABLE MIRROR; OPTICAL-SYSTEMS; OPEN-LOOP; LOW-COST; PERFORMANCE; COMPENSATION; MODES;
D O I
10.1016/j.precisioneng.2015.03.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Due to the absorption of extreme ultraviolet (EUV) light in the projection optical system of an EUV lithography machine, its mirrors thermally deform resulting in wavefront errors (WFEs) that deteriorate the imaging process. In order to compensate and correct for these mirror deformations, this paper proposes an adaptive optics (AO) system that uses an active mirror (AM) to counteract these WFEs. For this purpose, a list of system and mirror requirements is composed as well as a list of design choices, which motivate the AM design. In order to asses the specifications of this AM, finite element method (FEM) and experimental analyses are carried out to obtain and validate the general properties of the AM. For assessing linearity, the formal definition of linearity is used and verified in the experimental set-up. The instrument transfer function (ITF) is obtained by actuating the AM with different spatial frequencies f(x) and measuring the deformation amplitude. The AM is proven to be linear given a linear coefficient of thermal expansion (CTE) and the ITE shows a f(x)(-2) trend for both the time constant and the amplitude of the deformation. By using the ITF it is shown that the characteristics of the AM is suitable for an AO system for EUV lithography. (C) 2015 Elsevier Inc. All rights reserved.
引用
收藏
页码:102 / 110
页数:9
相关论文
共 50 条
  • [21] Performance-Based Active Wafer Clamp Design for Wafer Heating Effects in EUV Lithography
    van den Hurk, David
    Weiland, Siep
    van Berkel, Koos
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2020, 33 (03) : 424 - 432
  • [22] Design and method of fabricating phase shift masks for extreme ultraviolet lithography by partial etching into the EUV multilayer mirror
    Han, SI
    Weisbrod, E
    Xie, QH
    Mangat, PJS
    Hector, SD
    Dauksher, WJ
    EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 : 314 - 330
  • [23] EUV lithography
    Hawryluk, AM
    Ceglio, NM
    Markle, DA
    SOLID STATE TECHNOLOGY, 1997, 40 (07) : 151 - &
  • [24] EUV lithography
    不详
    ADVANCED MATERIALS, 2001, 13 (24) : 1844 - 1844
  • [25] EUV lithography
    Kemp, Kevin
    Wurm, Stefan
    COMPTES RENDUS PHYSIQUE, 2006, 7 (08) : 875 - 886
  • [26] EUV lithography
    Hawryluk, AM
    Ceglio, NM
    Markle, DA
    SOLID STATE TECHNOLOGY, 1997, 40 (08) : 75 - +
  • [27] EUV Lithography
    Wurm, Stefan
    PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2014,
  • [28] EUV lithography: LER design, mask, and wafer impact
    Wang, Jiahui
    Gallagher, Emily
    Van de Kerkhove, Jeroen
    Jonckheere, Rik
    Trivkovic, Darko
    OPTICAL AND EUV NANOLITHOGRAPHY XXXVII, 2024, 12953
  • [29] Pattern fidelity verification for logic design in EUV lithography
    Sugawara, Minoru
    Hendrickx, Eric
    Philipsen, Vicky
    Maloney, Chris
    Fenger, Germain
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V, 2014, 9048
  • [30] A reverse design method for EUV lithography illumination system
    Mei, Qiuli
    Li, Yanqiu
    Liu, Fei
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IV, 2013, 8679