Miniaturization techniques applied to Standard CMOS technology integrated antennas

被引：0

作者：

Gemio, J. ^{[1
]}

Parron, J. ^{[1
]}

Sacristan, J. ^{[2
]}

Vila, F. ^{[2
]}

Serra-Graells, F. ^{[2
]}

Baldi, A. ^{[2
]}

de Paco, P. ^{[1
]}

机构：

[1] Univ Autonoma Barcelona UAB, Dept Telecommun & Syst Engn, Edifici Q,Campus UAB, Bellaterra 08193, Spain

[2] IMB CNM, ICAS, Bellaterra 08193, Spain

来源：

PROCEEDINGS OF THE FOURTH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION | 2010年

关键词：

Dipole antennas; antenna miniaturization; integrated antennas;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comparative analysis of the performance offered by classical miniaturization techniques when they are applied to Standard CMOS technology integrated antennas. Top loaded and meandered dipoles are analyzed. It will be shown as the trade off between miniaturization and efficiency levels becomes much more significant due to the high losses of the low resistivity silicon used in Standard CMOS technologies.

引用

页数：4

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