A review: Mid-infrared photonic crystals in silicon and porous silicon based on ion beam irradiation

被引：1
|
作者：
Dang, Zhiya [1 ]
Breese, Mark B. H. [1 ,2 ]
Liu, Dongqing [3 ]
Turaga, Shuvan Prashant [1 ]
Azimi, Sara [1 ]
Song, Jiao [1 ]
Banas, Agnieszka [2 ]
Recio-Sanchez, Gonzalo [4 ]
机构：
[1] Natl Univ Singapore, Dept Phys, CIBA, Singapore 117542, Singapore
[2] Natl Univ Singapore, Singapore Synchrotron Light Source SSLS, Singapore 117603, Singapore
[3] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, Singapore
[4] Univ Aut noma Madrid, Dept Fis Aplicada, Madrid 28049, Spain
来源：
NANOPHOTONICS AND MICRO/NANO OPTICS II | 2014年 / 9277卷
关键词：
Silicon; Porous silicon; Porosity; Ion beam irradiation; Defect density; Electrochemical anodisation; Photonic crystal; Transmission spectra; FABRICATION; EMISSION;
D O I：
10.1117/12.2072443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon and porous silicon based photonic crystals are key aspects of photonic circuits with good compatibility with integrated circuits. Here a brief review is carried out on the fabrication of mid infrared photonic crystals using experimental processes of combining ion beam irradiation and electrochemical anodisation of silicon. Experimental processes have been developed to fabricate high aspect ratio trenches in porous silicon, high aspect ratio silicon pillars, buried channels in porous silicon, and multilevel freestanding silicon wires. These structures have the potential to be used for photonic crystals. Several 2D, quasi-3D and 3D mid infrared photonic crystals in porous silicon and silicon have been designed and fabricated.
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页数：11
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