Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

被引：14
|
作者：
Kakushima, K. [1 ]
Okamoto, K. [1 ]
Adachi, M. [1 ]
Tachi, K. [1 ]
Song, J. [1 ]
Sato, S. [1 ]
Kawanago, T. [1 ]
Ahmet, P. [2 ]
Tsutsui, K. [1 ]
Sugii, N. [1 ]
Hattori, T. [2 ]
Iwai, H. [2 ]
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Frontier Res Ctr, Tokyo, Japan
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 19期
关键词：
high-k; flat band voltage; hard X-ray photoemission spectroscopy (HX-PES);
D O I：
10.1016/j.apsusc.2008.02.177
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The flat band voltage shifts of HfO(2)/SiO(2)/nSi capacitors with ultra-thin La(2)O(3) insertion at HfO(2)/SiO(2) interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La(2)O(3) insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO(2) and La(2)O(3) at SiO(2) interface can be estimated to be 0.40 V. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：6106 / 6108
页数：3
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