InGaAs/InGaP HEMTs:: technological optimization and analytical modelling

被引：2
|
作者：
Kuzmík, J
Hasenöhrl, S
Kúdela, R
Hascík, S
Mozolová, Z
Lalinsky, T
Vogrincic, P
Breza, J
Skriniarová, J
Fox, A
Kordos, P
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia
[2] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia
[3] Res Ctr Juelich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany
来源：
VACUUM | 2001年 / 61卷 / 2-4期
关键词：
HEMT; Schottky contact; analytical modelling; auger electron spectroscopy;
D O I：
10.1016/S0042-207X(01)00279-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work several layer structure HEMTs with different spacer width and doping are compared. An HEMT analytical model is also used for the optimised device proposal. Wet and dry etching processing are applied for the gate recessing. Auger electron spectroscopy in combination with I-V diode characterisation is used for the process evaluation. Finally, different recipes for InGaP/metal interface oxide removal are tested. HEMT structures with 150 nm gate length and 130 GHz maximum available gain frequency are subjected to detailed DC analyses. Extracted parameters are correlated and analysed using the new HEMT analytical model. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：333 / 337
页数：5
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