InGaAs/InGaP HEMTs:: technological optimization and analytical modelling

被引：2
|
作者：
Kuzmík, J
Hasenöhrl, S
Kúdela, R
Hascík, S
Mozolová, Z
Lalinsky, T
Vogrincic, P
Breza, J
Skriniarová, J
Fox, A
Kordos, P
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia
[2] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia
[3] Res Ctr Juelich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany
来源：
VACUUM | 2001年 / 61卷 / 2-4期
关键词：
HEMT; Schottky contact; analytical modelling; auger electron spectroscopy;
D O I：
10.1016/S0042-207X(01)00279-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work several layer structure HEMTs with different spacer width and doping are compared. An HEMT analytical model is also used for the optimised device proposal. Wet and dry etching processing are applied for the gate recessing. Auger electron spectroscopy in combination with I-V diode characterisation is used for the process evaluation. Finally, different recipes for InGaP/metal interface oxide removal are tested. HEMT structures with 150 nm gate length and 130 GHz maximum available gain frequency are subjected to detailed DC analyses. Extracted parameters are correlated and analysed using the new HEMT analytical model. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：333 / 337
页数：5
相关论文
共 50 条
  • [31] Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
    Dammann, M
    Leuther, A
    Benkhelifa, F
    Feltgen, T
    Jantz, W
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01): : 81 - 86
  • [32] Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells
    Shu, G.W., 1600, Optical Society of America (OSA) (21):
  • [33] ELECTROLUMINESCENCE FROM INGAAS/INALAS HEMTS
    WOODHEAD, J
    REDDY, M
    DAVID, JPR
    ELECTRONICS LETTERS, 1994, 30 (14) : 1181 - 1183
  • [34] Stability of interfaces in pseudomorphic InGaAs HEMTs
    Audren, P.
    Dumas, J.M.
    Mottet, S.
    Vuchener, C.
    Paugam, J.
    Pavennec, M.P.
    Quality and Reliability Engineering International, 1992, 8 (03) : 279 - 282
  • [35] AlGaAsSb/InGaAs/AlGaAsSb metamorphic HEMTs
    Webster, RT
    Anwar, AFM
    Heaton, JL
    Nichols, K
    Duncan, S
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 315 - 323
  • [36] INALAS/INGAAS/INP JUNCTION HEMTS
    BOOS, JB
    BINARI, SC
    KRUPPA, W
    HIER, H
    ELECTRONICS LETTERS, 1990, 26 (15) : 1172 - 1173
  • [37] Strain compensated InGaAs/GaAsP/InGaP laser
    Dutta, NK
    Hobson, WS
    Vakhshoori, D
    Lopata, J
    Zydzik, G
    FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS II, 1997, 3004 : 22 - 33
  • [38] InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator
    Lin, Hsien-Chang
    Lee, Kuan-Wei
    Tu, Chao-Hsien
    Sze, Po-Wen
    Wang, Yeong-Her
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 181 - +
  • [39] High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization
    Tsao, S
    Mi, K
    Szafraneic, J
    Zhang, W
    Lim, HC
    Movaghar, B
    Razeghi, M
    QUANTUM SENSING AND NANOPHOTONIC DEVICES II, 2005, 5732 : 334 - 341
  • [40] Characteristics of two-stage Γ-gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by using AlGaAs/InGaP etching-stop layers
    Lin, Jia-Chuan
    Zeng, Fu-Xiang
    Wei, Jia-Na
    Liu, Chi-Ting
    Hsu, Meng-Kai
    Hou, Hsi-Ting
    ADVANCED MATERIALS, PTS 1-3, 2012, 415-417 : 1327 - +
12345