InGaAs/InGaP HEMTs:: technological optimization and analytical modelling

In this work several layer structure HEMTs with different spacer width and doping are compared. An HEMT analytical model is also used for the optimised device proposal. Wet and dry etching processing are applied for the gate recessing. Auger electron spectroscopy in combination with I-V diode characterisation is used for the process evaluation. Finally, different recipes for InGaP/metal interface oxide removal are tested. HEMT structures with 150 nm gate length and 130 GHz maximum available gain frequency are subjected to detailed DC analyses. Extracted parameters are correlated and analysed using the new HEMT analytical model. (C) 2001 Elsevier Science Ltd. All rights reserved.