Design of a high-performance 12T SRAM cell for single event upset tolerance

被引：3
|
作者：
Qi, Chunhua [1 ]
Zhang, Yanqing [1 ]
Ma, Guoliang [1 ]
Liu, Chaoming [1 ]
Wang, Tianqi [1 ]
Xiao, Liyi [1 ]
Huo, Mingxue [1 ]
Zhai, Guofu [2 ]
机构：
[1] Harbin Inst Technol, Lab Space Environm & Phys Sci, Harbin 150001, Peoples R China
[2] Harbin Inst Technol, Sch Elect Engn & Automat, Harbin 150001, Peoples R China
来源：
SCIENCE CHINA-INFORMATION SCIENCES | 2021年 / 64卷 / 11期
关键词：
D O I：
10.1007/s11432-020-3123-2
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页数：2
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