Use of a 3C-SiC buffer layer and vicinal substrates for the heteroepitaxial growth of MgO films on Si(001)

被引：0
|
作者：
Lee, SS [1 ]
Lee, SY [1 ]
Hyun, JS [1 ]
Kim, CG [1 ]
Kim, Y [1 ]
机构：
[1] Korea Res Inst Chem Technol, Adv Mat Div, Thin Film Mat Lab, Taejon 305600, South Korea
来源：
CHEMICAL VAPOR DEPOSITION | 2002年 / 8卷 / 06期
关键词：
D O I：
10.1002/1521-3862(20021203)8:6<257::AID-CVDE257>3.0.CO;2-G
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: High-quality epitaxial MgO has been deposited from methylmagnesium tert-butoxide on Si(001) by high vacuum CVD. The use of 3C-SiC buffer layers, which are grown using 1,3-disilabutane and vicinal Si(001) substrates that are 4degrees and 6degrees off towards the [110] direction, are found very effective in establishing the epitaxial growth of the MgO films (see Figure).
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页码：257 / +
页数：4
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