The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth

被引：7
|
作者：
Goryachko, A
Yeromenko, Y
Henkel, K
Wollweber, J
Schmeisser, D
机构：
[1] Brandenburg Tech Univ Cottbus, Dept Appl Phys, D-03013 Cottbus, Germany
[2] Inst Crystal Growth, Dept Vapour Growth, D-12489 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2004年 / 201卷 / 02期
关键词：
D O I：
10.1002/pssa.200303914
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：245 / 248
页数：4
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