Use of a 3C-SiC buffer layer and vicinal substrates for the heteroepitaxial growth of MgO films on Si(001)

被引：0
|
作者：
Lee, SS [1 ]
Lee, SY [1 ]
Hyun, JS [1 ]
Kim, CG [1 ]
Kim, Y [1 ]
机构：
[1] Korea Res Inst Chem Technol, Adv Mat Div, Thin Film Mat Lab, Taejon 305600, South Korea
来源：
CHEMICAL VAPOR DEPOSITION | 2002年 / 8卷 / 06期
关键词：
D O I：
10.1002/1521-3862(20021203)8:6<257::AID-CVDE257>3.0.CO;2-G
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: High-quality epitaxial MgO has been deposited from methylmagnesium tert-butoxide on Si(001) by high vacuum CVD. The use of 3C-SiC buffer layers, which are grown using 1,3-disilabutane and vicinal Si(001) substrates that are 4degrees and 6degrees off towards the [110] direction, are found very effective in establishing the epitaxial growth of the MgO films (see Figure).
引用
收藏
页码：257 / +
页数：4
相关论文
共 50 条
  • [1] Heteroepitaxial growth of MgO films on Si(001) substrates using cubic SiC as a buffer layer
    Lee, SY
    Lee, SH
    Nah, EJ
    Lee, SS
    Kim, Y
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (04) : 635 - 639
  • [2] 3C-SiC growth on (001) Si substrates by using a multilayer buffer
    Canino, Andrea
    Severino, Andrea
    Piluso, Nicolo
    La Via, Francesco
    Privitera, Stefania
    Alberti, Alessandra
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 263 - +
  • [3] Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates
    Nagasawa, H
    Kawahara, T
    Yagi, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 319 - 322
  • [4] Heteroepitaxial Growth and Characterization of 3C-SiC Films on Si Substrates Using LPVCVD
    Haiwu ZHENG
    Journal of Materials Science & Technology, 2005, (04) : 536 - 540
  • [5] Heteroepitaxial growth and characterization of 3C-SiC films on Si substrates using LPVCVD
    Zheng, HW
    Zhu, JJ
    Fu, ZX
    Lin, BX
    Li, XG
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2005, 21 (04) : 536 - 540
  • [6] Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
    Zhao, Y. M.
    Sun, G. S.
    Liu, X. F.
    Li, J. Y.
    Zhao, W. S.
    Wang, L.
    Li, J. M.
    Zeng, Y. P.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 251 - 254
  • [7] Growth mechanism of 3C-SiC heteroepitaxial layer on Si substrates and its Schottky barrier characteristics
    Ishida, Y.
    Takahashi, T.
    Yoshida, S.
    Okumura, H.
    Sekigawa, T.
    Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 1998, 62 (10): : 5 - 10
  • [8] Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (110) substrates by LPCVD
    Zheng, Haiwu
    Su, Hanfeng
    Fu, Zhuxi
    Li, Guang
    Li, Xiaoguang
    CERAMICS INTERNATIONAL, 2008, 34 (03) : 657 - 660
  • [9] INITIAL GROWTH OF HETEROEPITAXIAL DIAMOND ON SI(001) SUBSTRATES VIA BETA-SIC BUFFER LAYER
    SUESADA, T
    NAKAMURA, N
    NAGASAWA, H
    KAWARADA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (9A): : 4898 - 4904
  • [10] Reactive Magnetron Sputtering of AlN Films on Si Substrates Using 3C-SiC as a Buffer Layer
    Chung, Gwiy-Sang
    Lee, Tae-Won
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (04) : 2119 - 2122
12345