Low-energy oxygen ion beam induced chemical vapor deposition using methylsilane or dimethylsilane for the formation of silicon dioxide films

In this study, the ion beam induced chemical vapor deposition method was employed for silicon dioxide (SiO2) film formation using methylsilane (MS) or dimethylsilane (DMS). In a reaction chamber of our ion beam system, O+ ions together with MS or DMS were supplied to a substrate at room temperature. The O+ ion beam had an energy of 100 eV. After the experiment, a film was found to be deposited on the substrate in both MS and DMS cases. The thickness of the resulting film was 60 nm. The results obtained by Fourier-transform infrared spec-troscopy and X-ray photoelectron spectroscopy (XPS) showed that for both MS and DMS, the films were composed of SiO2. In the MS case, XPS data of the film showed that a small amount of carbon was included in the film. On the contrary, in the DMS case, a relatively large amount of carbon was included in the film.