Low-energy oxygen ion beam induced chemical vapor deposition using methylsilane or dimethylsilane for the formation of silicon dioxide films

被引：8

作者：

Yoshimura, Satoru ^{[1
]}

Sugimoto, Satoshi ^{[1
]}

Takeuchi, Takae ^{[2
]}

Kiuchi, Masato ^{[1
]}

机构：

[1] Osaka Univ, Ctr Atom & Mol Technol, Grad Sch Engn, Osaka 5650871, Japan

[2] Nara Womens Univ, Fac Sci, Dept Chem Biol & Environm Sci, Nara 6308506, Japan

来源：

THIN SOLID FILMS | 2022年 / 760卷

关键词：

Low -energy ion beam; Ion beam induced chemical vapor deposition; Methylsilane; Dimethylsilane; Silicon dioxide; THIN-FILMS; 3C-SIC FILMS; ROOM-TEMPERATURE; ECR PLASMA; SIC FILMS; GROWTH; HEXAMETHYLDISILOXANE; SI(100); TETRAETHYLORTHOSILICATE; SUBSTRATE;

D O I：

10.1016/j.tsf.2022.139508

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the ion beam induced chemical vapor deposition method was employed for silicon dioxide (SiO2) film formation using methylsilane (MS) or dimethylsilane (DMS). In a reaction chamber of our ion beam system, O+ ions together with MS or DMS were supplied to a substrate at room temperature. The O+ ion beam had an energy of 100 eV. After the experiment, a film was found to be deposited on the substrate in both MS and DMS cases. The thickness of the resulting film was 60 nm. The results obtained by Fourier-transform infrared spec-troscopy and X-ray photoelectron spectroscopy (XPS) showed that for both MS and DMS, the films were composed of SiO2. In the MS case, XPS data of the film showed that a small amount of carbon was included in the film. On the contrary, in the DMS case, a relatively large amount of carbon was included in the film.

引用

页数：6

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