Implementation of unipolar inverter based on spatial wave-function switched FET (SWSFET)

被引：0

作者：

Karmakar, Supriya ^{[1
]}

Chandy, John A. ^{[1
]}

Jain, Faquir C.

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

来源：

2012 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2012年

关键词：

SWSFETs; unipolar inverters; multi-channel FETs; TECHNOLOGY; HEMT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels that can conduct carrier flow from source to drain of the SWSFET. Because of this property, SWSFETs are useful to implement different multi-valued logic with reduced device count. In this work, we introduce the circuit model of a SWSFET and the design of a unipolar inverter where only one kind of charge carrier contributes to the current flow.

引用

页数：4

共 49 条

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