Implementation of unipolar inverter based on spatial wave-function switched FET (SWSFET)

被引：0
|
作者：
Karmakar, Supriya [1 ]
Chandy, John A. [1 ]
Jain, Faquir C.
机构：
[1] Intel Corp, Hillsboro, OR 97124 USA
来源：
2012 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2012年
关键词：
SWSFETs; unipolar inverters; multi-channel FETs; TECHNOLOGY; HEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels that can conduct carrier flow from source to drain of the SWSFET. Because of this property, SWSFETs are useful to implement different multi-valued logic with reduced device count. In this work, we introduce the circuit model of a SWSFET and the design of a unipolar inverter where only one kind of charge carrier contributes to the current flow.
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页数：4
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