A Programmable and Low-Area On-Die Termination for High-Speed Interfaces

被引：0

作者：

Dovale, Luisa ^{[1
]}

Sebastian Moya, Juan ^{[1
]}

Roa, Elkim ^{[1
]}

机构：

[1] Univ Ind Santander, Integrated Syst Res Grp OnChip, Bucaramanga, Colombia

来源：

2019 IEEE 10TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS & SYSTEMS (LASCAS) | 2019年

关键词：

Matching network; electromigration; ESD events; resistance terminations; on-die terminations;

D O I：

10.1109/lascas.2019.8667552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although much progress has been made over the years in high-speed I/O, there is no comprehensive characterization of their termination design. In contrast to the widespread notion that a programmable termination might not offer any challenge, electromigration in conjunction with ESD compliance and programmability demand considerable attention during the termination design. Here we combine a design methodology and circuit techniques to address the hinted challenges. Overall, our study provides a comprehensive characterization on the design of a 35 Omega-to-65 Omega matching network. As a result, this paper presents a programmable ESD-compliant on-die termination occupying an area of 0.03mm(2) on a standard 180nm CMOS with a maximum worst case of 7.14mA static current consumption.

引用

页码：173 / 176

页数：4

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