Device and process integration for a 0.55 mu m channel length CMOS device

被引：0
|
作者：
Waldo, WG [1 ]
Turkman, R [1 ]
Brownson, R [1 ]
机构：
[1] MOTOROLA INC,AUSTIN,TX 78721
来源：
MICROELECTRONIC DEVICE AND MULTILEVEL INTERCONNECTION TECHNOLOGY II | 1996年 / 2875卷
关键词：
device integration; process integration; triple layer metal; z scaling; punchthrough leakage; interconnect delay;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：124 / 135
页数：12
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