Design and Fabrication of 3300V/30A 4H-SiC JBS Diode

被引：0
|
作者：
Chen Zheng [1 ]
Yang Tongtong [1 ]
Huang Runhua [1 ]
Wang Ling [1 ]
Chen Guran [1 ]
Yang Lijie [1 ]
Bai Song [1 ]
机构：
[1] Nanjing Elect Devices Inst, State Key Lab Wide Bandgap Semicond Power Elect D, Nanjing 210016, Jiangsu, Peoples R China
来源：
2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS) | 2017年
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm(-3) and a thickness of 33 mu m is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V. [GRAPHICS] .
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页码：148 / 151
页数：4
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