Design and Fabrication of 3300V/30A 4H-SiC JBS Diode

被引：0
|
作者：
Chen Zheng [1 ]
Yang Tongtong [1 ]
Huang Runhua [1 ]
Wang Ling [1 ]
Chen Guran [1 ]
Yang Lijie [1 ]
Bai Song [1 ]
机构：
[1] Nanjing Elect Devices Inst, State Key Lab Wide Bandgap Semicond Power Elect D, Nanjing 210016, Jiangsu, Peoples R China
来源：
2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS) | 2017年
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm(-3) and a thickness of 33 mu m is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V. [GRAPHICS] .
引用
收藏
页码：148 / 151
页数：4
相关论文
共 50 条
  • [31] The Optimization of 3.3 kV 4H-SiC JBS Diodes
    Renz, Arne Benjamin
    Shah, Vishal Ajit
    Vavasour, Oliver James
    Baker, Guy William Clarke
    Bonyadi, Yegi
    Sharma, Yogesh
    Pathirana, Vasantha
    Trajkovic, Tanya
    Mawby, Phil
    Antoniou, Marina
    Gammon, Peter Michael
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 298 - 303
  • [32] Influence of the Design of Square p plus Islands on the Characteristics of 4H-SiC JBS
    Lee, Kung-Yen
    Liu, Yuan-Heng
    Wang, Sheng-Chung
    Chan, Le-Shan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 1394 - 1398
  • [33] 4H-SiC SBD和JBS退火研究
    闫锐
    杨霏
    陈昊
    彭明明
    潘宏菽
    微纳电子技术, 2009, 46 (07) : 433 - 436
  • [34] Well-balanced 4H-SiC JBSFET: Integrating JBS diode and VDMOSFET characteristics for reliable 1700V applications
    Hung, Chia-Lung
    Hsiao, Yi-Kai
    Yao, Jing-Neng
    Kuo, Hao-Chung
    SOLID-STATE ELECTRONICS, 2025, 226
  • [35] 600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET)
    Jang, Seung Yup
    Mancini, Stephen A.
    Sung, Woongje
    2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 335 - 338
  • [36] Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers
    Zhu, L
    Chow, TP
    Jones, KA
    Agarwal, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (02) : 363 - 368
  • [37] Design and fabrication of 4H-SiC APD linear Arrays
    Yan, F
    Qin, C
    Zhao, JH
    Bush, M
    Olsen, G
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 17 - 20
  • [38] Design methodologies and fabrication of 4H-SiC lateral Schottky barrier diode on thin RESURF layer
    Shimbori, Atsushi
    Huang, Alex Q.
    APPLIED PHYSICS LETTERS, 2022, 120 (12)
  • [39] Design and fabrication of a novel power VJFET in 4H-SiC
    Zhao, JH
    Li, X
    Tone, K
    Alexandrov, P
    Pan, M
    Weiner, M
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 564 - 567
  • [40] Design and fabrication of a 3.3 kV 4H-SiC MOSFET
    Huang Runhua
    Tao Yonghong
    Bai Song
    Chen Gang
    Wang Ling
    Liu Ao
    Wei Neng
    Li Yun
    Zhao Zhifei
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (09)
12345