Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

被引：9

作者：

Ben Amar, Achraf ^{[1
]}

Faucher, Marc ^{[1
]}

Grimbert, Bertrand ^{[1
]}

Cordier, Yvon ^{[2
]}

Francois, Marc ^{[1
]}

Tilmant, Pascal ^{[1
]}

Werquin, Matthieu ^{[3
]}

Zhang, Victor ^{[1
]}

Ducatteau, Damien ^{[1
]}

Gaquiere, Christophe ^{[1
]}

Buchaillot, Lionel ^{[1
]}

Theron, Didier ^{[1
]}

机构：

[1] CNRS, Inst Elect Microelect & Nanotechnol, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

[2] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, CRHEA, UPR 10, F-06560 Valbonne, France

[3] MC2 Technol, Cite Sci, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期

关键词：

PIEZOELECTRIC POLARIZATION; ALN; RESONATORS; MEMS;

D O I：

10.1143/APEX.5.067201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The piezoelectric actuation of a micro-electro-mechanical system (MEMS) resonator based on an AlGaN/GaN heterostructure is studied under various bias conditions. Using an actuator electrode that is also a transistor gate, we correlate the mechanical behaviour to the two-dimensional electron gas (2DEG) presence. The measured amplitude of the actuated resonator is maximum at moderate negative biases and drops near the pinch-off voltage in concordance with the 2DEG becoming depleted. Below the pinch-off voltage, residual actuation is still present, which is attributed to a more complex electric field pattern supported by quantitative modelling. The results confirm that epitaxial AlGaN barriers are fully adapted to the piezoelectric actuation of MEMS. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[31] Electrostatic actuation and charge sensing in piezoelectric nanomechanical resonators with a two-dimensional electron gas
Shevyrin, A. A.
Pogosov, A. G.
Bakarov, A. K.
Shklyaev, A. A.
APPLIED PHYSICS LETTERS, 2021, 118 (18)
[32] RF micro-electro-mechanical systems capacitive switches using ultra thin hafnium oxide dielectric
Zhang, Y
Onodera, K
Maeda, R
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (1A): : 300 - 304
[33] Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
Brueckner, K.
Niebelschuetz, F.
Tonisch, K.
Michael, S.
Dadgar, A.
Krost, A.
Cimalla, V.
Ambacher, O.
Stephan, R.
Hein, M. A.
APPLIED PHYSICS LETTERS, 2008, 93 (17)
[34] Temperature dependence of the diffusive thermopower in the two-dimensional interacting electron gas
Gold, A.
Dolgopolov, V. T.
EPL, 2011, 96 (02)
[35] Three-dimensional profile measurement of micro-electro-mechanical systems structures based on infrared light reflection interference
Shi, Jianhua
Han, Bingchen
LASER PHYSICS, 2017, 27 (11)
[36] Actuation and transduction of resonant vibrations in GaAs/AlGaAs-based nanoelectromechanical systems containing two-dimensional electron gas
Shevyrin, A. A.
Pogosov, A. G.
Budantsev, M. V.
Bakarov, A. K.
Toropov, A. I.
Rodyakina, E. E.
Shklyaev, A. A.
APPLIED PHYSICS LETTERS, 2015, 106 (18)
[37] TWO-DIMENSIONAL ELECTRON-GAS SYSTEMS AT SEMICONDUCTOR INTERFACES
GOSSARD, AC
SURFACE SCIENCE, 1985, 152 (APR) : 1153 - 1166
[38] New silicon-based micro-electro-mechanical systems for photo-acoustic trace-gas detection
Pelini, Jacopo
Dello Russo, Stefano
Garcia, Inaki Lopez
Canino, Maria Concetta
Roncaglia, Alberto
Pastor, Pablo Cancio
Galli, Iacopo
Ren, Wei
De Natale, Paolo
Wang, Zhen
Borri, Simone
Cumins, Mario Siciliani de
PHOTOACOUSTICS, 2024, 38
[39] Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas
Skuras, E
Long, AR
Chowdhury, S
Rahman, M
Kirk, KJ
Davies, JH
JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2623 - 2625
[40] Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas
Skuras, E.
Long, A.R.
Chowdhury, S.
Rahman, M.
Kirk, K.J.
Davies, J.H.
1600, American Institute of Physics Inc. (90):

← 1 2 3 4 5 →