Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

被引：9

作者：

Ben Amar, Achraf ^{[1
]}

Faucher, Marc ^{[1
]}

Grimbert, Bertrand ^{[1
]}

Cordier, Yvon ^{[2
]}

Francois, Marc ^{[1
]}

Tilmant, Pascal ^{[1
]}

Werquin, Matthieu ^{[3
]}

Zhang, Victor ^{[1
]}

Ducatteau, Damien ^{[1
]}

Gaquiere, Christophe ^{[1
]}

Buchaillot, Lionel ^{[1
]}

Theron, Didier ^{[1
]}

机构：

[1] CNRS, Inst Elect Microelect & Nanotechnol, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

[2] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, CRHEA, UPR 10, F-06560 Valbonne, France

[3] MC2 Technol, Cite Sci, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期

关键词：

PIEZOELECTRIC POLARIZATION; ALN; RESONATORS; MEMS;

D O I：

10.1143/APEX.5.067201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The piezoelectric actuation of a micro-electro-mechanical system (MEMS) resonator based on an AlGaN/GaN heterostructure is studied under various bias conditions. Using an actuator electrode that is also a transistor gate, we correlate the mechanical behaviour to the two-dimensional electron gas (2DEG) presence. The measured amplitude of the actuated resonator is maximum at moderate negative biases and drops near the pinch-off voltage in concordance with the 2DEG becoming depleted. Below the pinch-off voltage, residual actuation is still present, which is attributed to a more complex electric field pattern supported by quantitative modelling. The results confirm that epitaxial AlGaN barriers are fully adapted to the piezoelectric actuation of MEMS. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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