Chemical vapor deposition (CVD) of parylene films using liquid source delivery

Parylene-N films were formed on silicon substrates at a substrate temperature of -20 degrees C and pressures from 4 - 7 torr via liquid source precursor delivery. [2.2] Paracyclophane, the precursor of parylene-N, was dissolved in an organic solvent and delivered into a vaporizer / pyrolysis unit. The solution was vaporized at similar to 200 degrees C and its vapor was cracked at similar to 700 degrees C to generate the reactive monomeric species. Films were grown by condensation and polymerization, and analyzed by infrared (FTIR), thermogravimetric analysis (TGA) and X-ray diffraction (XRD) analysis. These analyses indicated the formation of parylene-N films without detectable solvent contamination or incorporation into the polymeric films.