Electrical and optical properties of DC reactive magnetron sputtered CuNiO2 films: Effect of annealing temperature

被引：4
|
作者：
Ravindra, K. [1 ]
Reddy, M. Hari Prasad [1 ]
Uthanna, S. [1 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Prades, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2017年 / 4卷 / 14期
关键词：
CuNiO2 thin films; DC magnetron sputtering; Structure; Electrical and optical properties; NIO THIN-FILMS; NICKEL-OXIDE; CU2O;
D O I：
10.1016/j.matpr.2017.10.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Copper nickel oxide (CuNiO2) thin films were deposited onto unheated glass substrates by DC reactive magnetron sputtering the composite target of Cu50Ni50 at a fixed oxygen partial pressure of 3x10(-4) mbar and sputter pressure of 3x10(-2) mbar. The as-deposited copper nickel oxide films were annealed in air at temperatures in the range 200-300 degrees C for one hour. The as-deposited and annealed films were characterized for their chemical composition, structure, electrical and optical properties. The as-deposited films were amorphous in nature. The films annealed in air at 250 degrees C and above were polycrystalline CuNiO2. The electrical resistivity of the films increased with annealing temperature due to the filling of oxygen ion vacancies. The films annealed at 300 degrees C exhibited the crystallite size of 65 nm, electrical resistivity of 65 Omega m and optical band gap of 2.06 eV. (C) 20 17 Elsevier Ltd. All rights reserved.
引用
收藏
页码：12505 / 12511
页数：7
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