Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures

被引：1

作者：

Srnanek, R. ^{[1
]}

Irmer, G. ^{[2
]}

Donoval, D. ^{[1
]}

Osvald, J. ^{[3
]}

Mc Phail, D. ^{[4
]}

Christoffi, A. ^{[4
]}

Sciana, B. ^{[5
]}

Radziewicz, D. ^{[5
]}

Tlaczala, M. ^{[5
]}

机构：

[1] Slovak Tech Univ Bratislava, Dept Microelect, Bratislava 81219, Slovakia

[2] Tech Univ Bergakad Freiberg, Inst Theoret Phys, D-09596 Freiberg, Germany

[3] Slovak Acad Sci, Inst Elect Engn, Bratislava 84101, Slovakia

[4] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[5] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 12期

关键词：

Zn delta doping; Concentration profile; Gallium arsenide; Bevel; Raman spectroscopy;

D O I：

10.1016/j.mejo.2008.06.039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micro-Raman spectroscopy was used to characterize beveled Zn delta (delta)-doped GaAs structures. By adapting procedures previously developed for the study of Si delta-doped GaAs structures, Zn-doping profiles were obtained for a set of structures prepared with different doping levels. Values of the doping spike concentration and the full-width at half-maximum of the doping profile were compared with the values obtained by the electrochemical capacitance-voltage (EC-V) and secondary ion mass spectroscopy (SIMS) methods. The good correspondence between this Raman procedure and other well-known methods proves the validity of the technique for determining doping profiles in Zn delta-doped GaAs structures. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1439 / 1443

页数：5

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