An analytical approximation for the excess noise factor of avalanche photodiodes with dead space

被引：16
|
作者：
Hayat, MM [1 ]
Chen, ZK
Karim, MA
机构：
[1] Univ Dayton, Electroopt Program, Dayton, OH 45469 USA
[2] Univ Dayton, Dept Elect & Comp Engn, Dayton, OH 45469 USA
[3] Univ Tennessee, Dept Elect Engn, Knoxville, TN 37996 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 07期
关键词：
D O I：
10.1109/55.772371
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Approximate analytical expressions are derived for the mean gain and the excess noise factor of avalanche photodiodes including the effect of dead space. The analysis is based on undertaking a characteristic-equation approach to obtain an approximate analytical solution to the existing system of recurrence equations which characterize the statistics of the random multiplication gain. The analytical expressions for the excess noise factor and the mean gain are shown to be in good agreement with the exact results obtained from numerical solutions of the recurrence equations for values of the dead space reaching up to 20% of the width of the multiplication region.
引用
收藏
页码：344 / 347
页数：4
相关论文
共 50 条
  • [1] On the analytical formulation of excess noise in avalanche photodiodes with dead space
    Jamil, Erum
    Cheong, Jeng S.
    David, J. P. R.
    Hayat, Majeed M.
    OPTICS EXPRESS, 2016, 24 (19): : 21597 - 21608
  • [2] Dead space effect on excess noise factor in double heterojunction avalanche photodiodes
    Tan, Siew Lin
    You, Ah Heng
    Lim, Thong Ling
    Cheang, Pei Ling
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2010, 9 (01) : 42 - 48
  • [3] Dead space effect on excess noise factor in double heterojunction avalanche photodiodes
    Siew Lin Tan
    Ah Heng You
    Thong Ling Lim
    Pei Ling Cheang
    Journal of Computational Electronics, 2010, 9 : 42 - 48
  • [4] EFFECT OF DEAD SPACE ON THE EXCESS NOISE FACTOR AND TIME RESPONSE OF AVALANCHE PHOTODIODES
    SALEH, BEA
    HAYAT, MM
    TEICH, MC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) : 1976 - 1984
  • [5] LUCKY DRIFT ESTIMATION OF EXCESS NOISE FACTOR FOR CONVENTIONAL AVALANCHE PHOTODIODES INCLUDING THE DEAD SPACE EFFECT
    MARSLAND, JS
    WOODS, RC
    BROWNHILL, CA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) : 1129 - 1135
  • [6] Analytical Formulas for Mean Gain and Excess Noise Factor in InAs Avalanche Photodiodes
    Jamil, Erum
    Hayat, Majeed M.
    Keeler, Gordon A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 610 - 614
  • [7] Avalanche multiplication and excess noise factor of heterojunction avalanche photodiodes
    You, A. H.
    Low, L. C.
    Cheang, P. L.
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 324 - +
  • [8] Effect of stochastic dead space on noise in avalanche photodiodes
    Kwon, OH
    Hayat, MM
    Campbell, JC
    Saleh, BEA
    Teich, MC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (05) : 693 - 700
  • [9] Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes
    Saleh, MA
    Hayat, MM
    Saleh, BEA
    Teich, MC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (03) : 625 - 633
  • [10] Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes
    Hossain, Md. Mottaleb
    David, John P. R.
    Hayat, Majeed M.
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2019, 37 (13) : 3315 - 3323
12345