An analytical approximation for the excess noise factor of avalanche photodiodes with dead space

被引：16
|
作者：
Hayat, MM [1 ]
Chen, ZK
Karim, MA
机构：
[1] Univ Dayton, Electroopt Program, Dayton, OH 45469 USA
[2] Univ Dayton, Dept Elect & Comp Engn, Dayton, OH 45469 USA
[3] Univ Tennessee, Dept Elect Engn, Knoxville, TN 37996 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 07期
关键词：
D O I：
10.1109/55.772371
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Approximate analytical expressions are derived for the mean gain and the excess noise factor of avalanche photodiodes including the effect of dead space. The analysis is based on undertaking a characteristic-equation approach to obtain an approximate analytical solution to the existing system of recurrence equations which characterize the statistics of the random multiplication gain. The analytical expressions for the excess noise factor and the mean gain are shown to be in good agreement with the exact results obtained from numerical solutions of the recurrence equations for values of the dead space reaching up to 20% of the width of the multiplication region.
引用
收藏
页码：344 / 347
页数：4
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