Analytical Formulas for Mean Gain and Excess Noise Factor in InAs Avalanche Photodiodes

被引：1

作者：

Jamil, Erum ^{[1
,2
,3
,4
]}

Hayat, Majeed M. ^{[1
,2
]}

Keeler, Gordon A. ^{[5
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

[3] Int Islamic Univ, Ctr Adv Elect & Photovolta Engn, Islamabad 44000, Pakistan

[4] Int Islamic Univ, Dept Elect Engn, Islamabad 44000, Pakistan

[5] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 02期

关键词：

Avalanche; InAs; photodiodes; semiconductors; single-carrier; DEAD-SPACE; MULTIPLICATION NOISE; IMPACT-IONIZATION; P(+)-I-N(+) DIODES; THIN GAAS; SI;

D O I：

10.1109/TED.2017.2786080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been known that McIntyre's local multiplication theory for avalanche photodiodes (APDs) does not fully explain the experimental results for single-carrier InAs APDs, which exhibit excess noise factor values below 2. While it has been established that the inclusion of the dead-space effect in the nonlocal multiplication theory resolves this discrepancy, no closed-form formulas for the mean gain and excess noise factor have been specialized to InAs APDs in a nonlocal setting. Upon utilizing prior analytical formulation of single-carrier avalanche multiplication based on age-dependent branching theory in conjunction with nonlocal ionization coefficients and thresholds for InAs, closed-form solutions of the mean gain and the excess noise factor for InAs APDs are provided here for the first time. The formulas are validated against published experimental data from InAs APDs across a variety of multiplication region widths and are shown to be applicable for devices with multiplication widths of 500 nm and larger.

引用

页码：610 / 614

页数：5

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