Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS

被引：0

作者：

Kobayashi, Yusuke ^{[1
,2
]}

Ohse, Naoyuki ^{[1
]}

Morimoto, Tadao ^{[2
]}

Kato, Makoto ^{[2
]}

Kojima, Takahito ^{[1
]}

Miyazato, Masaki ^{[1
,2
]}

Takei, Manabu ^{[1
,2
]}

Kimura, Hiroshi ^{[1
]}

Harada, Shinsuke ^{[2
]}

机构：

[1] Fuji Elect Co Ltd, Matsumoto, Nagano, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan

来源：

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Integration of SBD into SiC-MOSFET is promising to solve body-PiN-diode related problems known such as forward degradation and reverse recovery loss. Particularly in lower breakdown-voltage-class SBD-integrated MOSFET, cell pitch reduction has a greater impact on inactivating the body-PiN-diode. Here, we developed a novel device called an SBD-wall-integrated trench MOSFET (SWITCH-MOS), in which small cell pitch of 5 mu m was realized by utilizing trench side walls both for SBD and MOS channel with buried p(+) layer. The fabricated 1.2 kV SWITCH-MOS successfully suppressed the forward degradation under extremely high current density condition with low switching loss, low specific on-resistance, and low leakage current.

引用

页数：4

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