Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS

被引：0

作者：

Kobayashi, Yusuke ^{[1
,2
]}

Ohse, Naoyuki ^{[1
]}

Morimoto, Tadao ^{[2
]}

Kato, Makoto ^{[2
]}

Kojima, Takahito ^{[1
]}

Miyazato, Masaki ^{[1
,2
]}

Takei, Manabu ^{[1
,2
]}

Kimura, Hiroshi ^{[1
]}

Harada, Shinsuke ^{[2
]}

机构：

[1] Fuji Elect Co Ltd, Matsumoto, Nagano, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan

来源：

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Integration of SBD into SiC-MOSFET is promising to solve body-PiN-diode related problems known such as forward degradation and reverse recovery loss. Particularly in lower breakdown-voltage-class SBD-integrated MOSFET, cell pitch reduction has a greater impact on inactivating the body-PiN-diode. Here, we developed a novel device called an SBD-wall-integrated trench MOSFET (SWITCH-MOS), in which small cell pitch of 5 mu m was realized by utilizing trench side walls both for SBD and MOS channel with buried p(+) layer. The fabricated 1.2 kV SWITCH-MOS successfully suppressed the forward degradation under extremely high current density condition with low switching loss, low specific on-resistance, and low leakage current.

引用

页数：4

共 50 条

[31] Electrical characterisation of the gamma and UV irradiated epitaxial 1.2 kV 4H-SiC PiN diodes
Wolborski, M
Bakowski, M
Klamra, W
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1487 - 1490
[32] ANALSIS OF THE THERMAL RESISTANCE AND PERFORMANCE DEGRATION OF 4H-SiC PiN POWER DIODE
Li Jia-Chang
Song Qing-Wen
Zhang Yi-Meng
Tang Xiao-Yan
Zhang Yu-Ming
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[33] Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance
Kojima, Kazutoshi
Okumura, Hajime
APPLIED PHYSICS LETTERS, 2020, 116 (01)
[34] 4H-SiC photoconductive switch with low on-state resistance
Sun, Yanling
Yang, Meng
Song, Chaoyang
Shi, Shunxiang
Guo, Hui
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2015, 27 (12):
[35] 15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain
Salemi, Arash
Elahipanah, Hossein
Jacobs, Keijo
Zetterling, Carl-Mikael
Ostling, Mikael
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (01) : 63 - 66
[36] Realization of low on-resistance 4H-SiC power MOSFETs by using retrograde profile in p-body
Fujihira, K.
Miura, N.
Watanabe, T.
Nakao, Y.
Yutani, N.
Ohtsuka, K.
Imaizumi, M.
Takami, T.
Oomori, T.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 827 - +
[37] Influence of P+ Body on Performance and Ruggedness of 1.2 kV 4H-SiC MOSFETs
Kim, Dongyoung
Jang, Seung Yup
Morgan, Adam J.
Sung, Woongje
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (12) : 7659 - 7665
[38] 3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss
Na, Jaeyeop
Kim, Kwansoo
2022 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2022,
[39] 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
Niwa, Hiroki
Suda, Jun
Kimoto, Tsunenobu
APPLIED PHYSICS EXPRESS, 2012, 5 (06)
[40] Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
Song, Qing-Wen
Tang, Xiao-Yan
Yuan, Hao
Wang, Yue-Hu
Zhang, Yi-Meng
Guo, Hui
Jia, Ren-Xu
Lv, Hong-Liang
Zhang, Yi-Men
Zhang, Yu-Ming
CHINESE PHYSICS B, 2016, 25 (04)

← 1 2 3 4 5 →